Phone +49 89
Fax +49 89 8564-3219
|Company Name||Technology provided,and capacity||Strength|
|Systems on Silicon Manufacturing Co (SSMC)|
|TI||Pure IDM and using foundry service for its product. Still has analog and Mixed Signal Fab for its products. But in the process to outsource it digital process (I think almost done by now.)|
|Company Name||Basic Information||Products/technology portfolio and Services provided||Unique Strength (In some degree)|
|WIN Semiconductors, Taiwan||WIN Semi is the leading GaAs radio frequency integrated circuit (RFIC) and monolithic microwave integrated circuit (MMIC) wafer foundry services provider in the world. Located in Tao Yuan Shien, Taiwan, WIN Semi has two advanced six-inch wafer fabrication facilities and has recently purchased the land for a third fab||a 150mm Pure-Play GaAs Foundry.|
|SkyWork Solution (previous Conxant)|
|TriQuient Semiconductor||.||GaAs, GaN, BAW, SAW,VPIN,HVHBT||GaAs and GaN on SiC Foundry service|
Chemin du Moulin B.P.
94453 Limeil-Brévannes Cedex France
Phone : ++33 (0)1 45 10 67 31
Fax : ++33 (0)1 45 10 69 53
|RFMD||Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities.|| GaAs and GaN
|Global Communication Semiconductor Inc.(GCS)||
Founded in 1997, as a California Corporation, Global Communication Semiconductors, Inc. ("GCS") is an ISO-certified compound (III-V) semiconductor (GaAs, InP, GaN) foundry service provider that manufactures technology leading, high performance, high quality, semiconductor devices. Portfolio offerings include Radio Frequency Integrated Circuits (RFIC) and millimeter wave integrated circuits for the wireless markets, and Photodetectors and Lasers for optical communications markets.
|GCS offers foundry services for RF/Wireless and Optoelectronics as well as offers GCS designed proprietary optical wafers and chips.|
|United Monolithic Semiconductor (UMS)||Wilhelm
Runge Strasse 11
D-89081 Ulm, Germany
|Company Name||Basic Information||Products/technology portfolio and Services provided||Strength and unique capability|
|Cree Semiconductor||SiC and GaN substrate, LED,
Power chip, and RF chip.
||Very strong in SiC and GaN patent and IP. However weak in RF and MMIC field.|
|TriQuint Semiconductor||GaN on SiC foundry and prototype service.||Only available GaN foundry provider.|
2305 Presidential Drive
Durham, NC 27703
|Nitronex was founded in 1999 and is
headquartered in Durham, NC.
Nitronex has been awarded 24 patents with 15 others pending.
It is the leader in GaN on silicon, GaN on SiC and GaN on Saphire.technology.
26 June 2012, Gaas Labs acquires GaN-on-Si RF power transistor maker Nitronex
952 Commercial St,
Palo Alto, CA94303
Tel: +1 650.213.9311
Fax: +1 650.213.9511
Phone +49 / 351 / 212 99 - 0
Fax: +49 / 351 / 212 99 - 999
Kempische steenweg 293 bus 23 B-3500 Hassett, Beigium
Phone number: +32 11 56 66 20
Fax number: +32 11 56 66 29
|Very new startup company based on IMEC's technology on 6 to 8 in silicon substrate. Excellent all type of GaN starting wafer provider.|
Livermore, CA 94551
Tel: (925) 583-8400
Fax: (925) 583-8401
|Mostly light LED array. This is solid state LED lighting company.|
699 North Aixihu Road,
National High-Tech Industrial Development Zone, Nanchang, Jiangxi, P.R. China, 330029
Headquarters: +86-791-88158299 Human Resources: +86-791-88158285 Sales office: +86-791-88158359
General Fax: +86-791-88190011
|International Rectifier||GaN power transistor and Power switching device research for Power related Product. It seems that IR's GaN can be on silicon not just GaN on SiC.|
Phone +49 89
|Siltronic is a global leader in the
market for hyperpure silicon wafers and a partner to many top-tier chip
manufacturers. Wacker Chemie AG’s semiconductor division operates
production facilities in Europe, Asia and the USA. Siltronic develops
and manufactures wafers with diameters of up to 300 mm.
Siltronic AG joined IMEC’s GaN-on-Si Research Program to Develop Technology for Next-Gen Power Semiconductors and LEDs (Jan 7 2011).
|ultra pure silicon substrate provider. No Foundry service available.|
TI fab ramp puts analog rivals on notice by Mark LaPedus on 9/29/2009 9:09 PM EDT
Intel: foundry business is in oversuppy trouble by Peter Clarke 2/18/2011 4:22 PM EST
Foundry rankings: New firm emerges; Samsung, IBM lag by Mark LaPedus posted in EETimes on 1/27/2010 12:01 AM ESTApple reportedly to hand processor orders to TSMC
Technology news updates:
completes 28nm Design Infrastructure (DIGITIMES)
26 May 2011]
TSMC ready for 28nm mass production (From www.simmtester.com ) on [Monday, December 06, 2010]
Samsung Electronics announced that its foundry business, Samsung Foundry, has qualified its 28nm low-power (LP) process with high-k metal gate (HKMG) technology and is ready for risk production. [ published on Tuesday, June 7th, 2011 at 12:51 pm]
Foundries gird for war at 28-nm by
[7/13/2010 12:41 AM EDT]
Note: By the fourth quarter of 2011, TSMC, Globalfoundries and Samsung combined will have the capacity for nearly 280,000 300-mm wafer starts per month at 45-nm and below, up from about 70,000 in the fourth quarter of 2009, according to Gartner estimates.
TI dissatisfied with Samsung's foundry efforts posted on EET-India website on [Apr 07 2011]
For its current applications processor—the OMAP 4—TI has three foundry partners building the 40nm device: Globalfoundries Inc., Samsung Electronics and United Microelectronics Corp. (UMC). poisted on [Apr 07 2011]
source from TI
dissatisfied with Samsung's foundry efforts
Apr 2011 by -
EE Times (India)
TI, the Dallas-based chipmaker works with multiple foundries, such as Globalfoundries, Samsung, SMIC, UMC and others. TI and UMC are no strangers to each other.
UMC was TI's "lead" foundry for its digital products at the 90nm node. TI also worked with other foundries at that node.
At 65nm, TSMC was the lead foundry for TI. TSMC is making "high-performance" devices on a foundry basis for TI at the 40nm node, Ritchie said.
At 45nm, for the OMAP 4, TI relies on Globalfoundries, Samsung and UMC.
At 28nm, TI will work with UMC and others.
Like Taiwan rival TSMC, UMC is devising two options for its 28nm process. One is a traditional polysilicon gate stack. The other is a high-k/metal-gate offering. Initially, TI plans to go with a polysilicon gate-stack technology for the OMAP 5.
TI is also evaluating foundry vendors for the 20nm node. "We have not finalized that yet," he added. Globalfoundries, Samsung and TSMC have announced their respective 20nm processes.
Foundry and Technology information related to Analog and Mixed-Signal Technology
TI fab ramp puts analog rivals on notice
Also review the following
artticle about TI BICMOS roadmap
(09/29/2009 9:09 PM EDT)
SAN JOSE, Calif. -- Having finally announced its intent for a 300-mm fab in the United States, Texas Instruments Inc. is putting its analog rivals on notice.
TI's long-awaited move to announce the industry's first dedicated 300-mm analog fab on Tuesday (Sept. 29) is aimed to jump-start and extend its leadership position in analog share. Eventually, the company could also put pressure on its rivals with the new fab, especially in the power MOSFET arena, where it competes against Fairchild, IR, On Semiconductor and others, according to an analyst.
As reported, TI (Dallas) plans to open a 300-mm analog semiconductor fab in Richardson, Texas, the company said Tuesday. At the same time, the company also outlined its roadmap for mainstream analog processes and tipped a new 130-nm technology based on copper interconnects.
On the fab front, TI's new analog facility, dubbed RFAB, will be the first analog chip fab to use 300-mm wafers. TI has already moved to equip the fab by buying $172.5 million worth of chip production equipment from Qimonda AG's fab in Sandston, Va.
In effect, TI bought the entire 300-mm fab tool-set from Qimonda -- at a huge and stunning discount. Under the terms with Qimonda, TI bought 330 fab tools from the DRAM maker. The deal included i-line and 248-nm scanners from ASML Holding NV and Nikon Corp. To ramp up RFAB, TI will need to buy only 6 more tools, including epitaxial reactors and furnaces.
TI plans to move this equipment from Virginia to the Richardson fab. The company expects to begin equipping the facility next month and ship the first chips from the fab by the end of next year.
Initially, RFAB will produce chips based on TI's LBC7 process, its mainstream, workhorse analog technology. The 0.25-micron process is a high-power, BiCMOS technology.
Chips based on the LBC7 process account for 40 percent of TI's analog output. Over time, the fab will make chips based on TI's future analog processes, such as the yet-to-be-announced LBC8 (0.18-micron technology) and LBC9 (130-nm).
RFAB enables TI to expand its worldwide analog capacity and bring ''us cost scaling,'' said Kevin Ritchie, senior vice president of the Technology and Manufacturing Group at TI.
The fab will give TI a leg up on its rivals. In fact, the company's analog competitors have not announced a new fab in several years. Most analog fabs produce 8-inch wafers and below, it was noted. In contrast, "TI is the only vendor that can bring 300-mm to analog,'' said Doug Freedman, an analyst with Broadpoint AmTech.
Initially, a 300-mm analog fab could be advantageous--and could the lower the cost--for ''large-die'' products like MOSFETs, Freedman said. Earlier this year, TI acquired Ciclon Semiconductor Device Corp., a supplier of power MOSFETS and RF-based LDMOS power transistors.
''The MOSFET makers might have the most to worry about'' with TI's 300-mm fab announcement, he said. Leading power MOSFET suppliers include Diodes, Fairchild, International Rectifier, Ixys, On Semiconductor, Vishay and others, he said.
One of the challenges for TI is clear: photomask costs. A 300-mm mask-set is more expensive than 200-mm (and below) reticles, he said. To get a return for a 300-mm mask-set in analog will be challening at best.
Overall, TI remained the No. 1 analog chip vendor in 2008, despite seeing its market share decline to 14.1 percent from 14.4 percent, according to Databeans Inc. The No. 2 analog player, Europe's STMicroelectronics Inc., grew its analog business 1 percent from $3.8 billion in 2007 to $3.9 billion in 2008, thanks largely to the weakening of the dollar and consolidation of the ST and NXP wireless businesses, Databeans said.
|Company Name||Fab Name||Status||Product||wafer size||Geometry||Note|
|IBM Microelectronics||Bldg 323 (plus Annex)||In Production||Foundry/IDM||300 mm (12")||32 nm||(1)|
|IM Flash Technologies, LLC||IMFT-T (Lehi)||In Production||Memory/Flash||300 mm (12")||25 nm||(2)|
|DMOS 6||In Production||Logic/DSP||300 mm (12")||65 nm|
|RFAB (Richardson FAB)||In Production||Analog|
|Qimonda AG - Virginia||Richmond 300||Closed||Memory/DRAM||300 mm (12")||75 nm|